Silicon Carbide Plate Properties
||2,730° C (4,946° F) (decomposes)
||3.0 to 3.2 g/cm3
||1 to 4 10x Ω-m
||0.15 to 0.21
||670 to 1180 J/kg-K
Download Silicon Carbide SDS
Silicon Carbide Plate Description
Silicon carbide (SiC) is a lightweight ceramic material with high strength properties comparable to diamond. It has high thermal conductivity, low thermal expansion, thermal shock resistance, oxidation resistance, and corrosion resistance. Silicon carbide is an excellent ceramic raw material for applications requiring good erosion and abrasive resistance. Consequently, it is useful in a variety of industrial applications including spray nozzles, shot blast nozzles, kiln furniture, and cyclone components.
Advanced Ceramic Materials (ACM) Corporation produces sintered silicon carbide refractory plates, reaction bonded SiC ceramic plates and recrystallized SiC plates. Our recrystallized SiC products have a high purity, while our reaction bonded and sintered silicon carbide plates have a high mechanical strength.
Silicon Carbide Plate Specifications
||Reaction Bonded SiC
|Purity of Silicon Carbide
|Max. Working Temp. (`C)
|Bulk Density (g/cm3)
|Flexural strength (MPa)
|Compressive strength (MPa)
|Thermal expansion (10^-6/`C)
||4.0 (< 500℃)
||4.4 (< 500℃)
|Thermal conductivity (W/m.K)
||High temp. High resistance.
Silicon Carbide Plate Advantages
SiC plates provide:
Large plate capability
Purity and grain size consistency
Quick turn capability and precision grinding
Silicon Carbide Plate Applications
-Silicon carbide is an ideal material for sealing rings and bearings.
-Silicon carbide is frequently used in semiconductor and coating industries.
ACM’s Silicon Carbide Plate is carefully handled to minimize damage during storage and transportation and to preserve the quality of our products in their original condition.