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Pressureless Sintered Silicon Carbide (SSiC) is manufactured from high-purity ultra-fine silicon carbide powder (sub-micron) in a vacuum furnace at the temperature of 2100℃ – 2200℃. Very strong sintering bonds between the material grains are formed. Direct Sintered SiC is a better grade than Reaction Bonded SiC and is commonly specified for high-temperature work and hard-faced seal components.
Available Form: Tube, Plate, Ball, Seal Ring, Nozzle, Gasket, etc.
Mechanical Properties of Pressureless Sintered Silicon Carbide
|
Property |
Units |
Value |
|
Density |
g/cm3 |
3.1-3.2 |
|
Vickers hardness |
HV0.5 |
2500 |
|
Purity (SiC Percentage) |
% |
99 |
|
Porosity |
% |
＜0.2 |
|
Fracture Toughness |
MPa·m1/2 |
4 |
|
Compressive Strength |
MPa |
3000 |
|
Flexural Strength |
MPa |
400 |
|
Young’s Modulus of Elasticity |
GPa |
410 |
|
Poisson’s Ratio ν |
0.15 |
|
|
Thermal Conductivity |
W/m.k |
100-120 |
|
Thermal Expansion Coefficient |
i/℃ |
4*10-6 |
|
Maximum Use Temperature |
℃ |
1600 |
Related reading: Silicon Carbide: Reaction Sintering vs. Pressureless Sintering
