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Reaction Bonded Silicon Carbide (RBSiC/SiSiC) is sintered with high purity micron silicon carbide and graphite under a vacuum condition at 1600℃. The content of free silicon is under 12%. The surface of reaction sintered SiC is relatively rough.
Available Form: Tube, Plate, Nozzle, etc.
Mechanical Properties of Reaction Bonded Silicon Carbide
|
Property |
Unit |
Data |
|
Density |
g/cm3 |
＞ 3.02 |
|
Vickers hardness |
HV0.5 |
2100 |
|
Purity (SiC Percentage) |
% |
90 |
|
Porosity |
% |
＜0.1 |
|
Bending Strength |
MPa |
＞250 (20℃) |
|
＞280 (1200℃) |
||
|
Young’s Modulus of Elasticity |
GPa |
332 (20℃) |
|
300(1200℃) |
||
|
Thermal Conductivity |
W/m.k |
45(1200℃) |
|
Thermal Expansion Coefficient |
i/℃ |
4.5*10-6 |
|
Maximum Use Temperature |
℃ |
1380 |
Related reading: Silicon Carbide: Reaction Sintering vs. Pressureless Sintering
