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Reaction Bonded Silicon Carbide Properties
31 January , 2024
Reaction Bonded Silicon Carbide (RBSiC/SiSiC) is sintered with high purity micron silicon carbide and graphite under a vacuum condition at 1600℃. The content of free silicon is under 12%. The surface of reaction sintered SiC is relatively rough.
Available Form: Tube, Plate, Nozzle, etc.
Mechanical Properties of Reaction Bonded Silicon Carbide
Property | Unit | Data |
Density | g/cm3 | ＞ 3.02 |
Vickers hardness | HV0.5 | 2100 |
Purity (SiC Percentage) | % | 90 |
Porosity | % | ＜0.1 |
Bending Strength | MPa | ＞250 (20℃) |
＞280 (1200℃) | ||
Young’s Modulus of Elasticity | GPa | 332 (20℃) |
300(1200℃) | ||
Thermal Conductivity | W/m.k | 45(1200℃) |
Thermal Expansion Coefficient | i/℃ | 4.5*10-6 |
Maximum Use Temperature | ℃ | 1380 |
Related reading: Silicon Carbide: Reaction Sintering vs. Pressureless Sintering
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