|Flexural strength||800 MPa|
|Fracture toughness||6.5 MPam 1/2|
|Thermal stress parameters||569 K|
|Thermal expansion coefficient||1.4~3.7 S.I.|
Silicon nitride plate is a man-made compound synthesized through several different chemical reaction methods. Due to the even performance in high temperature, Si3N4 is a commonly used ceramic material in the metallurgical industry. It has excellent thermal shock resistance due to the microstructure. The creep and oxidation resistance of Si3N4 is also superior, its low thermal conductivity and high wear resistance also make it an outstanding material that can withstand conditions of most industrial applications.
There are 5 different methods to produce Silicon Nitride including SRBSN, GPSN, HPSN, HIP-SN and RBSN, make the application and working material different slightly. In these 5 methods of production, GPSN is most commonly used to produce Si3N4 components. You can find other silicon nitride Si3N4 ceramic parts here.
|Compressive Strength||3000 MPa|
|Flexural Strength||800 MPa|
|Fracture Toughness KIc||6.5 MPa m^1/2|
|Young’s Modulus E||320 GPa|
|Hardness Vickers (HV 1)||16 GPa|
|Maximum Temperature (Inert Gas)||1200°C|
|Maximum Temperature (Air)||1100°C|
|Thermal Conductivity @ 20°C||28 W/mK|
|Thermal Conductivity @ 1000°C||16 W/mK|
|Thermal Expansion (20–100°C)||2*10-6/K|
|Thermal Expansion (20–1000°C)||3.510-6/K|
|Thermal Shock parameter R1||600 K|
|Thermal Shock parameter R2||15 W/mm|
|Resistivity at 20°C||10^12 Ωcm|
|Resistivity at 800°C||10^7 Ωcm|
|Dielectric constant||6 MHz|
Silicon nitride plate is ideal for applications with high dynamic stresses, thermal rigor, and demanding reliability requirements.
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