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SC0957 Silicon Carbide (SiC) Trays

Silicon Carbide Tray Properties

Silicon Carbide Trays

Compound Formula SiC
Molecular Weight 40.1
Appearance Black
Melting Point 2,730° C (4,946° F) (decomposes)
Density 3.0 to 3.2 g/cm3
Electrical Resistivity 1 to 4 10x Ω-m
Poisson’s Ratio 0.15 to 0.21
Specific Heat 670 to 1180 J/kg-K

 

 

Silicon Carbide Tray Description

Silicon carbide (SiC) is a lightweight ceramic material with high strength properties comparable to diamond. It has excellent thermal conductivity, low thermal expansion, and is resistant to corrosion from acids. Silicon carbide is an excellent ceramic material for applications requiring good erosion and abrasive resistance. Consequently, it is useful in a variety of applications including spray nozzles, shot blast nozzles and cyclone components.

Silicon Carbide Tray Specifications

  Recrystallized SiC Sintered SiC Reaction Bonded SiC
Purity of Silicon Carbide 99.5% 98% >88%
Max. Working Temp. (`C) 1650 1550 1300
Bulk Density (g/cm3) 2.7 3.1 >3
Appearance Porosity <15% 2.5 0.1
Flexural strength (MPa) 110 400 380
Compressive strength (MPa) >300 2200 2100
Thermal expansion (10^-6/`C) 4.6 (1200`C) 4.0 (<500`C) 4.4 (<500`C)
Thermal conductivity (W/m.K) 35~36 110 65
Main characteristics High temp. High resistance.
High purity
Fracture Toughness Chemical Resistance

 

Silicon Carbide Tray Applications

-Silicon carbide can be applied in areas such as semiconductor and coating.
-Our silicon carbide trays are widely used in LED industry.

Packing Service

ACM’s Silicon Carbide Trays are carefully handled to minimize damage during storage and transportation and to preserve the quality of our products in their original condition.

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