Silicon Carbide Tray Properties
||2,730° C (4,946° F) (decomposes)
||3.0 to 3.2 g/cm3
||1 to 4 10x Ω-m
||0.15 to 0.21
||670 to 1180 J/kg-K
Silicon Carbide Tray Description
Silicon carbide (SiC) is a lightweight ceramic material with high strength properties comparable to diamond. It has excellent thermal conductivity, low thermal expansion, and is resistant to corrosion from acids. Silicon carbide is an excellent ceramic material for applications requiring good erosion and abrasive resistance. Consequently, it is useful in a variety of applications including spray nozzles, shot blast nozzles and cyclone components.
Silicon Carbide Tray Specifications
||Reaction Bonded SiC
|Purity of Silicon Carbide
|Max. Working Temp. (`C)
|Bulk Density (g/cm3)
|Flexural strength (MPa)
|Compressive strength (MPa)
|Thermal expansion (10^-6/`C)
||4.0 (< 500℃)
||4.4 (< 500℃)
|Thermal conductivity (W/m.K)
||High temp. High resistance.
Silicon Carbide Tray Applications
-Silicon carbide can be applied in areas such as semiconductor and coating.
-Our silicon carbide trays are widely used in LED industry.
ACM’s Silicon Carbide Trays are carefully handled to minimize damage during storage and transportation and to preserve the quality of our products in their original condition.