|Melting Point||2,730° C (4,946° F) (decomposes)|
|Density||3.0 to 3.2 g/cm3|
|Material||Graphite, with CVD SiC coating|
|Purity||>99.99% for SiC coating|
CVD process delivers extremely high purity and theoretical density of SiC coating with no porosity. What’s more, as silicon carbide is very hard, it can be polished to a mirror-like surface. CVD silicon carbide (SiC) coating delivered several advantages including ultra-high purity surface and extremely wear durability. As the coated products have great performance in high vacuum and high temperature circumstance, they are ideal for applications in semiconductor industry and other ultra-clean environment. We also provide pyrolytic graphite (PG) products.
-CVD silicon carbide coating has been applied in semiconductor industries already, such as MOCVD tray, RTP and oxide etching chamber since silicon nitride has great thermal shock resistance and can withstand high energy plasma.
-Silicon carbide is widely used in semiconductor and coating.
ACM’s Silicon Carbide Coated Graphite Trays are carefully handled to minimize damage during storage and transportation and to preserve the quality of our products in their original condition.